Thin film transistor, method of manufacturing the thin film transistor, and display device
AssigneeSony Corporation
InventorsNarihiro Morosawa, Takashige Fujimori, Toshiaki Arai
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Abstract
There is provided a thin film transistor, which has a uniform and good electric characteristic and has a simple configuration allowing decrease in number of manufacturing steps, and a method of manufacturing the thin film transistor, and a display device having the thin film transistor. The thin film transistor includes: a gate electrode; an oxide semiconductor film having a multilayer structure of an amorphous film and a crystallized film; and a source electrode and a drain electrode provided to contact the crystallized film.
Claims9
A thin film transistor comprising:
- a gate electrode;
- an oxide semiconductor film having a multilayer structure of an amorphous film and a crystallized film;
- and
- a source electrode and a drain electrode provided to contact the crystallized film.
A method of manufacturing a thin film transistor comprising:
- forming a gate electrode on a substrate;
- forming a gate insulating film on the gate electrode;
- forming a multilayer film of an amorphous film including an oxide semiconductor and a crystallized film including an oxide semiconductor in this order on the gate insulating film;
- shaping the multilayer film by etching to form an oxide semiconductor film having a multilayer structure of the amorphous film and the crystallized film;
- and
- forming a metal film on the crystallized film, and etching the metal film to form a source electrode and a drain electrode.
A method of manufacturing a thin film transistor comprising:
- forming a gate electrode on a substrate;
- forming a gate insulating film on the gate electrode;
- forming a multilayer film of an amorphous film including an oxide semiconductor and a low-melting point amorphous film in this order on the gate insulating film, the low-melting point amorphous film including an oxide semiconductor having a lower melting point than that of the amorphous film,;
- shaping the multilayer film by etching;
- annealing the low-melting point amorphous film to be formed into a crystallized film so as to form an oxide semiconductor film having a multilayer structure of the amorphous film and the crystallized film;
- and
- forming a metal film on the crystallized film, and etching the metal film to form a source electrode and a drain electrode.
A display device comprising:
- thin film transistors and pixels,
- wherein each of the thin film transistors includes
- a gate electrode,
- an oxide semiconductor film having a multilayer structure of an amorphous film and a crystallized film, and
- a source electrode and a drain electrode provided to contact the crystallized film.
Dependencies are inferred from the claim text.