Thin film transistor and method of manufacturing the same

A thin film transistor comprising:

• a gate electrode formed on a substrate;
• a semiconductor pattern overlapped with the gate electrode and including a multi-elements compound including a II B element and a VI A element or including a III A element and a V A element wherein the VI A element excludes oxygen and wherein the multi-elements compound has a mixed phase including an amorphous phase and a crystalline phase;
• a source electrode overlapped with a first end of the semiconductor pattern;
• and
• a drain electrode overlapped with a second end of the semiconductor pattern and spaced apart from the source electrode.

A thin film transistor comprising:

• a gate electrode formed on a substrate;
• a semiconductor pattern overlapped with the gate electrode and including multi-elements compound including a II B element and a VI A element or including a III A element and a V A element, wherein the VI A element excludes oxygen and wherein the multi-elements compound has a crystalline phase including a plurality of grains having a grain size of about 0.1 nm to about 1 μm;
• a source electrode overlapped with a first end of the semiconductor pattern;
• and
• a drain electrode overlapped with a second end of the semiconductor pattern and spaced apart from the source electrode.

A method of manufacturing a thin film transistor, the method comprising:

• forming a gate electrode on a substrate;
• depositing a source of a multi-elements compound including a II B element and a VI A element or including a III A element and a V A element to form a semiconductor layer including the multi-elements compound on the substrate;
• forming a semiconductor pattern overlapped with the gate electrode by pattering the semiconductor layer;
• forming a source electrode overlapped with an first end of the semiconductor pattern;
• and
• forming a drain electrode overlapped with a second end of the semiconductor pattern and spaced apart from the source electrode.