Switching element and method for fabricating same
AssigneeNEC Corporation
InventorsSatoru Toguchi, Hiroyuki Endoh
Life of this patent
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Abstract
A switching element comprises a source electrode, a drain electrode arranged apart from the source electrode, an active layer in contact with the electrodes, and a gate electrode arranged apart from the source and drain electrodes and being in contact with the active layer with a gate insulating layer interposed therebetween. The active layer is formed of a dispersion film containing predetermined carbon nanotubes and a predetermined polyether compound.
Claims12
A switching element comprising:
- a source electrode, a drain electrode arranged apart from the source electrode, an active layer in contact with the electrodes, and a gate electrode arranged apart from the source and drain electrodes and being in contact with the active layer with a gate insulating layer interposed therebetween, wherein;
- the active layer is formed of a dispersion film containing carbon nanotubes having a functional group containing a carbonyl group and a predetermined polyether compound.
A fabrication method of a switching element, comprising:
- preparing a supporting substrate,
- forming an aluminum film as a gate electrode using a sputtering method through a shadow mask on the supporting substrate,
- applying a gate insulating film using a spin coating method on the supporting substrate and the gate electrode,
- baking the supporting substrate applied with the gate insulating film,
- forming a film for a source electrode and a drain electrode on the calcinated supporting substrate,
- patterning the film on the supporting substrate for the electrodes using a lift-off method, and
- forming an active layer of a dispersion film by applying a dispersion solution containing predetermined carbon nanotubes and a predetermined polyether compound using a casting method.
A fabrication method of a switching element, comprising:
- preparing a supporting substrate,
- forming a gate electrode by a silver paste using a dispenser method on the supporting substrate,
- applying a gate insulating film using a dispenser method on the supporting substrate,
- baking the supporting substrate applied with the gate insulating film,
- forming an active layer of a dispersion film by applying a dispersion solution containing predetermined carbon nanotubes and a predetermined polyether compound using a casting method,
- patterning the film on the supporting substrate for the electrodes using a lift-off method, and
- forming a drain electrode and a source electrode.
A fabrication method of a switching element, comprising:
- preparing a supporting substrate,
- forming an active layer of a dispersion film by applying a dispersion solution containing predetermined carbon nanotubes and a predetermined polyether compound using a casting method,
- forming a drain electrode and a source electrode on the active layer,
- forming a gate insulating film on the active layer, the drain electrode and the source electrode, and
- forming a gate electrode on the gate insulating film.
Dependencies are inferred from the claim text.