Semiconductor light-emitting element, method of manufacturing same, and light-emitting device

A method of manufacturing a semiconductor light-emitting element, in which

• a light-emitting layer having a laminated structure of a p-type GaN film and an n-type GaN film is formed;
• the p-type GaN film of the light-emitting layer is joined to a bottom surface of a hexagonal pyramidal base formed from ZnO;
• an anode is joined to the bottom surface of the base at a position apart from the light-emitting layer;
• a cathode is joined to an N-polar plane of the n-type GaN film, said N-polar plane of the n-type GaN film being an opposite side to the p-type GaN film;
• and
• a fine peak-valley structure is formed on the N-polar plane of the n-type GaN film outside a portion joined to the cathode, said N-polar plane of the n-type GaN film being said opposite side to the p-type GaN film,
• the method comprising:
• forming a transfer layer on the N-polar plane of the n-type GaN film;
• pressing a mold die having a predetermined peak-valley pattern on one surface thereof against the transfer layer and transferring the peak-valley pattern to the transfer layer;
• and
• dry etching the transfer layer and the n-type GaN layer from surface side and etching out the transfer layer and part of the N-polar plane of the n-type GaN layer, whereby the fine peak-valley structure is formed on the N-polar plane of the n-type GaN film.