Semiconductor light emitting device and method for manufacturing the same

A method for manufacturing a semiconductor light emitting device, comprising:

• forming a stack film on a first substrate, the stack film being formed by stacking an n-type nitride semiconductor layer, an active layer having a multiquantum well structure of a nitride semiconductor, and a p-type nitride semiconductor layer in this order;
• forming a contact electrode on an upper face of the p-type nitride semiconductor layer;
• forming a first metal layer on upper faces of the contact electrode and the stack film, the first metal layer having a larger minimum diameter than a minimum diameter of the upper face of the stack film;
• performing patterning on the first metal layer;
• performing patterning on the stack film so as to have a tapered shape in cross-section, with an area of a film plane gradually increasing from the upper face toward a lower face;
• forming a second metal layer on an upper face of a second substrate, the second metal layer having a larger minimum diameter than the minimum diameter of the first metal layer, the second metal layer being made of a material having a lower melting point than a melting point of the first metal layer;
• placing the first substrate so that an upper face of the first metal layer faces an upper face of the second metal layer, and bonding the upper face of the second metal layer and the upper face of the first metal layer to each other;
• detaching the first substrate from the stack film by performing irradiation with a laser from a side of the first substrate, and transferring the stack film onto the second substrate;
• performing patterning on the stack film so as to have a tapered shape in cross-section, with the area of the film plane gradually increasing from the n-type nitride semiconductor layer toward the p-type nitride semiconductor layer;
• forming a protection film that protects the upper face of the n-type nitride semiconductor layer, side faces of the stack film, a region of the first metal layer other than a region in contact with the p-type nitride semiconductor layer, and a region of the second metal layer other than a region in contact with the first metal layer,
• removing the protection layer from the upper face of the n-type nitride semiconductor layer, except for an outer circumferential region of the upper face, to expose the upper face of the n-type nitride semiconductor layer, except for the region in which the protection layer is left;
• forming an n-electrode on the exposed upper face of the n-type nitride semiconductor layer, the n-electrode being designed for a plurality of devices;
• and
• forming concavities and convexities in the exposed upper face of the n-type nitride semiconductor layer by performing wet etching on the exposed upper face;
• and
• providing a p-electrode on a face of the second substrate, the face being on the opposite side from the first metal layer.