Semiconductor storage device and manufacturing method thereof

A semiconductor storage device comprising;

• a semiconductor substrate;
• a selection transistor formed on a main surface of the semiconductor substrate;
• an inter-layer insulative film disposed over the selection transistor;
• a plug selectively disposed to pass through the inter-layer insulative film and connected electrically with the selection transistor;
• a chalcogenide material layer connected to one end of the plug and disposed so as to extend over the inter-layer insulative film;
• an upper electrode disposed over the chalcogenide material layer;
• an adhesion layer comprising a semiconductor formed between the chalcogenide material layer and the inter-layer insulative film;
• and
• an interfacial layer formed between the chalcogenide material layer and the plug and comprising an alloy of a material of the adhesion layer and a material of the plug.

A semiconductor storage device including:

• a plug;
• a phase change material layer formed on the plug;
• and
• an electrode formed on the phase change material layer, wherein the semiconductor storage device stores data according to a phase state of a region of the phase change material layer that is continuous between the plug and the electrode, and
• further includes a boundary layer formed between the plug and the phase change material layer and comprised of a semiconductor film having such a thickness that a tunnel current flows.

A semiconductor storage device including:

• a plug;
• a phase change material layer formed on the plug;
• and
• an electrode formed on the phase change material layer,
• wherein the semiconductor storage device stores data according to a phase state of a region of the phase change material layer that is continuous between the plug and the electrode, and
• further includes a boundary layer formed between the plug and the phase change material layer and comprised of an alloy of a semiconductor material and a material applying to the plug.