Method for Improving Implant Uniformity During Photoresist Outgassing

A method for improving implant uniformity of an ion implantation system, comprising:

• generating a main scan waveform having a piecewise linear slope;
• generating a compensation waveform;
• and
• adding the compensation waveform to the main scan waveform to produce a beam scanning waveform that is utilized to direct an ion implantation beam;
• wherein the compensation waveform is selected to have a waveform and an amplitude that are configured to modify the slope of the main scan waveform in a manner that accounts for non-uniformities of a dose of an ion beam along a fast scan direction.

An ion implantation system, comprising:

• a first wave generator configured to generate a main scan waveform having a substantially piecewise linear slope that is configured to provide a substantially uniform ion beam scanning velocity over a workpiece;
• a second wave generator configured to generate a compensation waveform;
• and
• an adder configured to provide a beam scanning waveform to a beam scanning apparatus, wherein the beam scanning waveform is formed by adding the main scan waveform and the compensation waveform;
• wherein the compensation waveform is selected to have a waveform and an amplitude configured to modify the slope of the main scan waveform in response to substantially instantaneous pressure measurements received by the second wave generator;
• and wherein the beam scanning waveform comprises a non-linear slope that causes an ion beam to increase or decrease its speed as it moves across the workpiece.