Method for inspecting and measuring sample and scanning electron microscope
AssigneeHitachi High-Technologies Corporation
InventorsMakoto EZUMI, Satoru Iwama, Junichi Kakuta, Takahiro Sato, Akira Ikegami
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Abstract
As an aspect for realizing accurate observation, inspection, or measurement of the contact hole with large aspect ratio, a method and a device to scan a second electron beam after scanning a first electron beam to a sample to charge the sample are proposed wherein the beam diameter of the first electron beam is made larger than the beam diameter of the second electron beam.
Claims19
A method for inspecting or measuring a sample based on an electron obtained by scanning a second electron beam to the charged sample after scanning a first electron beam to the sample and charging the sample, wherein
- the beam diameter of the first electron beam is made larger than the beam diameter of the second electron beam.
5-8. (canceled)
A method for inspecting or measuring a sample based on an electron obtained by scanning an electron beam to the charged sample after scanning an electron beam to the sample and charging the sample, wherein
- in charging the sample, firstly, an electron beam with the secondary electron generation efficiency δ1 larger than 1.0 is scanned to a region having a first magnitude, and secondly, another electron beam with the secondary electron generation efficiency δ2 less than said δ1 is scanned to a region narrower than the first magnitude, and thereafter, an electron beam is scanned for inspection or measurement of the sample.
A scanning electron microscope comprising:
- an electron source,
- a scanning deflector for scanning an electron beam emitted from the electron source on a sample, and
- a control device for adjusting energy of the electron beam reaching the sample and controlling the scanning deflector, wherein
- the control device adjusts the reaching energy of the electron beam and controls the scanning deflector so that, firstly, an electron beam with the secondary electron generation efficiency δ1 larger than 1.0 is scanned to a region having a first magnitude, and secondary, another electron beam with the secondary electron generation efficiency δ2 less than said δ1 is scanned to a region narrower than the first magnitude, and thereafter an electron beam is scanned.
A scanning method of an electron beam, wherein a first electron beam is scanned to a sample to charge the sample, thereafter a second electron beam is scanned to the charged sample, wherein
- scanning is performed with the center of scanning of the first electron beam is shifted from the center of scanning of the second electron beam.
A method for inspecting or measuring a sample, wherein, in a scanning method thereof of an electron beam scanning, after scanning a first electron beam to a sample to charge the sample, a second electron beam is scanned to the charged sample, wherein
- a condition is established measuring the charge voltage of the sample by scanning the first electron beam.
A scanning electron microscope, wherein
- in a scanning method thereof of an electron beam scanning, after scanning a first electron beam to a sample to charge the sample, a second electron beam to the charged sample, a database relating the sample and the irradiation condition of the first electron beam is possessed.
Dependencies are inferred from the claim text.