Magnetically modified semiconductor electrodes for photovoltaics, photoelectrosynthesis, and photocatalysis
AssigneeUniversity of Iowa Research Foundation
InventorsJohna LEDDY, Heung Chan Lee
Life of this patent
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Abstract
A device for hydrogen gas production comprising a working electrode comprising a magnetically-modified semiconductor electrode. Onset of hydrogen gas evolution for the device, measured at a current density of about 0.4 mA/cm2, occurs at an overpotential of no more than about −1200 mV, or no more than about −600 mV, or no more than about −500 mV. The magnetically-modified semiconductor working electrode provides the device with a photoconversion efficiency of at least about 0.1%, or at least about 1.6%, or at least about 6.2%. Other applications include photovoltaics, photoelectrochemical synthesis, and photocatalysis.
Claims45
A device for production of hydrogen gas comprising:
- at least one working electrode, wherein the working electrode comprises at least one magnetically-modified semiconductor electrode;
- and
- at least one counter electrode,
- wherein the onset of hydrogen gas evolution for the device, measured at a current density of about 0.4 mA/cm2, occurs at an overpotential of no more than about −1200 mV.
A device for production of hydrogen gas comprising:
- at least one working electrode, wherein the working electrode comprises a p-type semiconductor, a magnetic material, and an ion-exchange polymer, wherein the magnetic material and the ion-exchange polymer are disposed on the p-type semiconductor;
- and
- at least one counter electrode.
A device for production of hydrogen gas comprising:
- at least one working electrode, wherein the working electrode comprises a magnetically-modified semiconductor electrode;
- and
- at least one counter electrode,
- wherein the working electrode and counterelectrode provide the device with a photoconversion efficiency of at least about 0.1%.
A device for production of hydrogen gas comprising:
- at least one working electrode, wherein the working electrode comprises p-type silicon with a low doping level, resistivity of about 1 to about 10 Ω-cm, and surface orientation comprising <100>, <110>, or <111>;
- silane-coated magnetite;
- and ion-exchange polymer, wherein the magnetite and the ion-exchange polymer are disposed on the p-type semiconductor;
- and
- at least one counter electrode, wherein the counter electrode comprises platinum mesh;
- wherein the working electrode and counter electrode provide the device with a photoconversion efficiency of at least about 1.6%, and
- wherein the onset of hydrogen gas evolution for the device, measured at a current density of about 0.4 mA/cm2, occurs at an overpotential of no more than about −600 mV.
Dependencies are inferred from the claim text.