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US 2011/0214736 A1Published application
Photodiode, image sensor and solar cell
OwnerTae-Yon LEE, Dong-Seok Suhinventors
Life of this patent
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Abstract
A photodiode includes a p-type semiconductor material and an n-type chalcogenide compound. The p-type semiconductor material and the n-type chalcogenide compound form a pn-junction.
Claims20
A photodiode, comprising:
- a p-type semiconductor material;
- and
- an n-type chalcogenide compound forming a pn-junction with the p-type semiconductor material.
A photodiode, comprising:
- a p-type semiconductor material;
- and
- an n-type chalcogenide compound formed on an upper surface of the p-type semiconductor material to form a pn-junction structure with the p-type semiconductor material, wherein the p-type semiconductor material is a silicon material or a group III-V compound semiconductor material, wherein the n-type chalcogenide compound is selected from the group consisting of Xa(Sb1-xBix)bS1-a-b, Xa(Sb1-xBix)bTe1-a-b and Xa(Sb1-xBix)bSe1-a-b, where 0<a<1, 0<b<1, 0<x<1, and X is selected from the group consisting of silicon (Si), germanium (Ge), tin (Sn), lead (Pb), aluminum (Al), gallium (Ga), indium (In), copper (Cu), zinc (Zn), silver (Ag), cadmium (Cd), titanium (Ti), vanadium (V), chromium (Cr), manganese (Mn), iron (Fe), cobalt (Co) and nickel (Ni) or a combination thereof and wherein x in Xa(Sb1-xBix)bS1-a-b, Xa(Sb1-xBix)bTe1-a-b and Xa(Sb1-xBix)bSe1-a-b is more than about 0.3 and less than about 0.6.
A photodiode, comprising:
- a p-type chalcogenide compound;
- and
- an n-type chalcogenide compound formed on an upper surface of the p-type chalcogenide compound to form a pn-junction structure with the p-type chalcogenide compound, wherein the p-type chalcogenide compound is selected from the group consisting of XaSbbS1-a-b, XaSbbTe1-a-b and XaSbbSe1-a-b, where 0<a<1, 0<b<1, and X is selected from the group consisting of silicon (Si), germanium (Ge), tin (Sn), lead (Pb), aluminum (Al), gallium (Ga), indium (In), copper (Cu), zinc (Zn), silver (Ag), cadmium (Cd), titanium (Ti), vanadium (V), chromium (Cr), manganese (Mn), iron (Fe), cobalt (Co) and nickel (Ni) or a combination thereof, wherein the n-type chalcogenide compound is selected from the group consisting of Xa(Sb1-xBix)bS1-a-b, Xa(Sb1-xBix)bTe1-a-b and Xa(Sb1-xBix)bSe1-a-b, where 0<a<1, 0<b<1, 0<x<1, and X is selected from the group consisting of Si, Ge, Sn, Pb, Al, Ga, In, Cu, Zn, Ag, Cd, Ti, V, Cr, Mn, Fe, Co and Ni or a combination thereof and wherein x in Xa(Sb1-xBix)bS1-a-b, Xa(Sb1-xBix)bTe1-a-b and Xa(Sb1-xBix)bSe1-a-b is more than about 0.3 and less than about 0.6.
Dependencies are inferred from the claim text.