Method of fabricating a back-contact solar cell and device thereof
AssigneeSunPower Corporation
InventorsBo Li, David Smith, Peter Cousins
Life of this patent
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Abstract
Methods of fabricating back-contact solar cells and devices thereof are described. A method of fabricating a back-contact solar cell includes forming an N-type dopant source layer and a P-type dopant source layer above a material layer disposed above a substrate. The N-type dopant source layer is spaced apart from the P-type dopant source layer. The N-type dopant source layer and the P-type dopant source layer are heated. Subsequently, a trench is formed in the material layer, between the N-type and P-type dopant source layers.
Claims20
A method of fabricating a back-contact solar cell, the method comprising:
- forming an N-type dopant source layer and a P-type dopant source layer above a material layer disposed above a substrate, the N-type dopant source layer spaced apart from the P-type dopant source layer;
- heating the N-type dopant source layer and the P-type dopant source layer;
- and, subsequently,
- forming a trench in the material layer, between the N-type and P-type dopant source layers.
A back-contact solar cell, comprising:
- a material layer disposed above a substrate;
- and
- a trench disposed in the material layer, the trench separating an N-type region and a P-type region of the material layer, the P-type region comprising a dopant concentration directly adjacent to the trench substantially equal to a dopant concentration in the center of the P-type region.
Dependencies are inferred from the claim text.