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US 2011/0214688 A1Published application
Cleaning solution for sidewall polymer of damascene processes
AssigneeLam Research Corporation
InventorsAnthony D. Ozzello, JR., Ying-Liang Chuang
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Abstract
An aqueous cleaning solution and a method of use of the cleaning solution are described herein for removing sidewall polymer of a damascene process on a wafer without damaging any low-k material and interconnect material on the wafer.
Claims20
An aqueous cleaning solution effective for removing sidewall polymer produced during a damascene process on a wafer containing one or more metallic interconnect materials and one or more low-k interlayer dielectric material films, the cleaning solution comprising:
- 0.01 to 0.1 w/w % of hydrofluoric acid,
- 1 to 5 w/w % of sulfuric acid,
- 1 to 15 w/w % of a carboxylic acid,
- up to 2 w/w % of one or more species of chelating agent,
- up to 15 w/w % of one or more species of amine, and
- 75 w/w % or more of water;
- wherein the cleaning solution does not damage the one or more low-k interlayer dielectric material films.
4 more elements
Dependencies are inferred from the claim text.