Film deposition apparatus
AssigneeTokyo Electron Limited
InventorsHitoshi Kato, Yasushi Takeuchi
Life of this patent
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Abstract
A film deposition apparatus is provided with a gas nozzle in which ejection holes that eject a reaction gas are formed along a longitudinal direction of the gas nozzle, and a flow regulation member that protrudes from the gas nozzle in either one of upstream and downstream directions of a rotation direction of a turntable. In such a configuration, a separation gas flowing from an upstream side of the rotation direction to the gas nozzle is restricted from flowing between the gas nozzle and the turntable on which a substrate is placed, and the reaction gas flowing upward from the turntable is restricted by the separation gas, thereby impeding a reaction gas concentration in a process area from being lowered.
Claims15
A film deposition apparatus for forming a thin film by sequentially supplying at least two kinds of reaction gases to a surface of a substrate and performing such a gas supply cycle a plurality of times to deposit multiple layers of a reaction product in a vacuum chamber, the film deposition apparatus comprising:
- a turntable provided in the vacuum chamber;
- a substrate receiving area provided in the turntable in order for the substrate to be placed therein;
- a first reaction gas supplying portion and a second reaction gas supplying portion that are provided above the turntable, away from each other in a rotation direction of the turntable, and supply a first reaction gas and a second reaction gas, respectively;
- a separation area that is positioned between a first process area where the first reaction gas is supplied and a second process area where the second reaction gas is supplied, in order to separate atmospheres of these process areas, and includes a separation gas supplying portion that supplies a separation gas;
- and
- an evacuation port that evacuates the vacuum chamber,
- wherein at least one of the first reaction gas supplying portion and the second reaction gas supplying portion extends in a direction intersecting a direction along which the substrate receiving area moves, and is configured as a gas nozzle in which ejection holes for ejecting a reaction gas toward the turntable are arranged along a longitudinal direction thereof,
- wherein a flow space for causing the separation gas to flow therethrough is formed above the gas nozzle, and
- wherein the gas nozzle is provided with a flow regulation member that extends outward in at least one direction of an upstream direction and a downstream direction from the gas nozzle.
A film deposition apparatus wherein a turntable on which plural substrates are placed is rotated in a vacuum chamber so that the substrates contact in turn reaction gases that are supplied to plural different process areas, thereby forming a thin film on the substrates, the film deposition apparatus comprising:
- a separation area that is provided between the plural process areas and supplies a separation gas that impedes different reaction gases from reacting with each other in a space away from upper surfaces of the substrates;
- reaction gas supplying portions that supply the corresponding reaction gases toward the substrates in the vicinities of the substrates and that are away from a ceiling of the process areas;
- a flow regulation member that suppresses a concentration of the reaction gas from being lowered by the separation gas that flows into the process area from the separation area and further flows into a gap between the reaction gas supplying portion and the substrate;
- and
- a gas flow passage that is provided between the ceiling of the process area and the reaction gas supplying portion, and to which the flow regulation member guides the separation gas.
Dependencies are inferred from the claim text.