Semiconductor pressure sensor

Abstract

There is provided a semiconductor pressure sensor which improves the sensor sensitivity and is excellent in the withstand pressure characteristic and the temperature characteristic. In the semiconductor pressure sensor in which a diaphragm is formed by a cavity provided on one of top and bottom surfaces of a silicon substrate and a plurality of piezoresistors is disposed in the diaphragm edge, a recess which has a larger area than the planar shape of the diaphragm and whose entire edge is located outward from the diaphragm edge in plan view is provided in a protective film which covers the entire surface of the silicon substrate on the diaphragm side. The protective film located on the diaphragm is preferably formed of SiO2.

Dependencies are inferred from the claim text.