Back to results
US 2011/0214266 A1Published application
Methods of Forming Capacitors
AssigneeMicron Technology, Inc.
InventorsMark Kiehlbauch, Kevin R. Shea
Life of this patent
Estimating the term…
Abstract
A method of forming a capacitor includes providing material having an opening therein over a node location on a substrate. A shield is provided within and across the opening, with a void being received within the opening above the shield and a void being received within the opening below the shield. The shield is etched through within the opening. After the etching, a first capacitor electrode is formed within the opening in electrical connection with the node location. A capacitor dielectric and a second capacitor electrode are formed operatively adjacent the first capacitor electrode
Claims35
A method of forming a capacitor, comprising:
- providing material having an opening therein over a substrate;
- providing a shield within and across the opening with a void being received within the opening above the shield and a void being received within the opening below the shield;
- etching within the opening through the shield;
- after the etching, forming a first capacitor electrode within the opening;
- and
- forming a capacitor dielectric and a second capacitor electrode operatively adjacent the first capacitor electrode.
3 more elements
A method of forming a capacitor within a base material having an opening therein over a node location on a substrate, comprising:
- forming bridging material across the base material opening, the bridging material having a planar inner surface within the base material opening, the base material opening comprising a void beneath the bridging material;
- forming covering material over the base material and the bridging material;
- etching an opening through the covering material to the bridging material received across the base material opening;
- etching through the bridging material through the covering material opening;
- forming a first capacitor electrode within the covering material opening and within the base material opening in electrical connection with the node location;
- and
- forming a capacitor dielectric and a second capacitor electrode operatively adjacent the first capacitor electrode.
4 more elements
A method of forming a capacitor within a base material having an opening therein over a node location on a substrate, comprising:
- depositing a bridging material over the base material across the base material opening and partially within the base material opening to bridge across the base material opening, the bridging material having a planar inner surface within the base material opening, the base material opening comprising a void beneath the bridging material;
- depositing covering material over the base material and over the bridging material that is received within the base material opening, the depositing of all of said covering material comprising a highest deposition temperature in degrees C. at which any of said covering material is deposited, the bridging material having a melting temperature in degrees C. which is at least 10% higher than said highest deposition temperature;
- etching an opening through the covering material to the bridging material received across the base material opening;
- etching through the bridging material through the covering material opening;
- forming a first capacitor electrode within the covering material opening and within the base material opening in electrical connection with the node location;
- and
- forming a capacitor dielectric and a second capacitor electrode operatively adjacent the first capacitor electrode.
4 more elements
A method of forming a capacitor within a base material received over a node location on a substrate, comprising:
- within a processing tool, etching an opening into the base material over the node location;
- after etching the base material opening and before removing the substrate from the processing tool thereafter, depositing a bridging material within the processing tool over the base material across the base material opening to bridge across the base material opening, the bridging material having a planar inner surface within the base material opening, the base material opening comprising a void beneath the bridging material;
- forming covering material over the base material and the bridging material;
- etching an opening through the covering material to the bridging material received across the base material opening;
- etching through the bridging material through the covering material opening;
- forming a first capacitor electrode within the covering material opening and within the base material opening in electrical connection with the node location;
- and
- forming a capacitor dielectric and a second capacitor electrode operatively adjacent the first capacitor electrode.
5 more elements
A method of forming a capacitor within a base material having an opening therein over a node location on a substrate, comprising:
- forming bridging material across the base material opening, the bridging material having a planar inner surface within the base material opening, the base material opening comprising a void beneath the bridging material;
- forming covering material over the base material and the bridging material;
- within a processing tool, etching an opening through the covering material to the bridging material received across the base material opening;
- within the processing tool and before removing the substrate therefrom after etching the covering material opening, etching through the bridging material through the covering material opening;
- forming a first capacitor electrode within the covering material opening and within the base material opening in electrical connection with the node location;
- and
- forming a capacitor dielectric and a second capacitor electrode operatively adjacent the first capacitor electrode.
4 more elements
A method of forming a capacitor within a base material having an opening therein over a node location on a substrate, comprising:
- forming bridging material across the base material opening, the base material opening comprising a void beneath the bridging material;
- forming covering material over the base material and the bridging material, the covering material and the bridging material being of the same composition;
- etching an opening through the covering material to the bridging material received across the base material opening;
- etching through the bridging material through the covering material opening;
- forming a first capacitor electrode within the covering material opening and within the base material opening in electrical connection with the node location;
- and
- forming a capacitor dielectric and a second capacitor electrode operatively adjacent the first capacitor electrode.
4 more elements
A method of forming a capacitor within a base material having an opening therein over a node location on a substrate, comprising:
- forming bridging material across the base material opening, the base material opening comprising a void beneath the bridging material;
- forming covering material over the base material and the bridging material, the covering material and the bridging material being of different compositions;
- etching an opening through the covering material to the bridging material received across the base material opening;
- etching through the bridging material through the covering material opening;
- forming a first capacitor electrode within the covering material opening and within the base material opening in electrical connection with the node location;
- and
- forming a capacitor dielectric and a second capacitor electrode operatively adjacent the first capacitor electrode.
4 more elements
Dependencies are inferred from the claim text.