Back to results
US 2011/0214101 A1Published application
Method of thermal density optimization for device and process enhancement
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYing-Chou Cheng, Tsong-Hua Ou, Chih-Wei Hsu, Cheng-Lung Tsai, Ru-Gun Liu, Wen-Chun Huang, Boren Luo
Life of this patent
Estimating the term…
Abstract
The present disclosure provides an integrated circuit method. The method includes providing an integrated circuit (IC) design layout; simulating thermal effect to the IC design layout; simulating electrical performance to the IC design layout based on the simulating thermal effect; and performing thermal dummy insertion to the IC design layout based on the simulating electrical performance.
Claims20
An integrated circuit method, comprising:
- providing an integrated circuit (IC) design layout;
- simulating thermal effect to the IC design layout;
- simulating electrical performance to the IC design layout based on the simulating thermal effect;
- and
- performing thermal dummy insertion to the IC design layout based on the simulating electrical performance.
2 more elements
An integrated circuit method, comprising:
- providing a plurality of test patterns;
- collecting thermal data of the test patterns;
- building up a thermal model based on the thermal data;
- and
- adding thermal dummy features to an integrated circuit (IC) design using the thermal model.
2 more elements
An integrated circuit method, comprising:
- providing a plurality of test patterns;
- collecting thermal data of the test patterns;
- creating a look-up table based on the thermal data;
- evaluating thermal effect to an integrated circuit (IC) design;
- adding thermal dummy features to the IC design using the look-up table;
- and
- thereafter making a mask according to the IC design.
4 more elements
Dependencies are inferred from the claim text.