Control method of non-volatile semiconductor device
AssigneeElpida Memory, Inc.
InventorAkiyoshi Seko
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AssigneeElpida Memory, Inc.
InventorAkiyoshi Seko
Estimating the term…
Disclosed is a control method of a non-volatile semiconductor device including cells, wherein a stress for rewriting information is applied to each of the cells, and each cell has a first time period as a period of time until a characteristic of the cell is stabilized to expectation value information after the stress for rewriting information is applied, a plurality of first sequences, in each of which writing is performed to a plurality of the cells continuously in time series, and a plurality of second sequences, in each of which verification of a plurality of the cells is performed continuously in time series, after the writing performed continuous in time series. When repeating, continuously in time series, a plurality of sets, each of the sets comprising a plurality of the first sequences and a plurality of the second sequences, a period of time from completion of application of the stress to each of the cells in the first sequence until start of the verification in the second sequence for the each of the cells subjected to the stress application, is arranged for each of all of the sets, wherein the period of time is the first time period or more.
A control method of a non-volatile semiconductor device including a plurality of cells, to at least one of which a stress for rewriting information is applied, each of said cells having a first time period as a period of time in which a characteristic of said cell is stabilized to expectation value information after said stress for rewriting information is applied to said cell, said method comprising:
Dependencies are inferred from the claim text.