System and method for implementing multi-resolution advanced process control

A system for fabricating ICs from a semiconductor wafer, the system comprising:

• means for obtaining low resolution metrology data and high resolution metrology data related to a process module for performing a process on the wafer;
• means for generating a low resolution process model of a process variable of the process;
• means for generating a high resolution process model of the process variable;
• means for calibrating the low resolution process model;
• means for generating a multi-resolution process model from the calibrated low resolution process model and the high resolution process model for modeling the process variable as a function of both the low resolution metrology data and the high resolution metrology data;
• and
• means for controlling performance of the process using a response of the multi-resolution process model and the low and high resolution metrology data.

A method for implementing a multi-resolution APC in a semiconductor fabrication process, the method comprising:

• obtaining pre-process high and low resolution metrology data with regard to a process using a first metrology tool;
• performing the process on the semiconductor wafer using a process tool;
• obtaining post-process high and low resolution metrology data with regard to the process using a second metrology tool;
• modeling a process variable of the process as a function of the pre- and post-process low resolution metrology data to generate a low-resolution process model;
• modeling the process variable as a function of the pre- and post-process high resolution metrology data to generate a high-resolution process model;
• calibrating the low resolution process model;
• combining the calibrated low resolution process model with the high resolution process model to generate a multi-resolution process model that models the process variable as a function of both the low resolution metrology data and the high resolution metrology data;
• and
• analyzing a response of the multi-resolution process model and the post-process low and high resolution metrology data to control performance of the process using an APC controller.