Metallocenyl dendrimer, organic memory device using the same and fabrication method of the organic memory device
OwnerTae Lim Choi, Kwang Hee Lee +1inventors
InventorsTae Lim Choi, Kwang Hee Lee, Sang Kyun Lee
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Abstract
Disclosed are a metallocenyl dendrimer, an organic memory device using the metallocenyl dendrimer and a method for fabricating the organic memory device. The metallocenyl dendrimer may be composed of a dendrimer and metallocenes as redox species linked to the dendrimer. The organic memory device may possess the advantages of shorter switching time, decreased operating voltage, decreased fabrication costs and increased reliability. Based on these advantages, the organic memory device may be used as a highly integrated, large-capacity memory device.
Claims2
A metallocenyl dendrimer represented by Formula 1:
- wherein R1, R2, R3, R4, R5 and R6, which is identical to or different from each other, are independently H, a C1-C20 alkyl group, a C1-C20 alkoxy group, a C3-C20 cycloalkyl group, a C3-C20 heterocycloalkyl group, a C5-C30 aryl group, a C5-C30 heteroaryl group, a C7-C30 arylalkyl group, or a C5-C30 aryloxy group;
- Z1, Z2 and Z3, which is identical to or different from each other, are independently a single bond, —C═C—, —(CH2)n (in which n is from about 1 to about 20), or a carbonyl group;
- and M is Fe, Ru, Zr or Ti.
Dependencies are inferred from the claim text.