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US 2011/0212628 A1Published application
Sequential pulse deposition
OwnerWeimin Liinventor
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Abstract
A method for growing films on substrates using sequentially pulsed precursors and reactants, system and devices for performing the method, semiconductor devices so produced, and machine readable media containing the method.
Claims3
A method of forming a film on a substrate, comprising:
- flowing a purge gas into a reaction chamber containing the substrate;
- injecting a pulse of precursor gas into the reaction chamber to initiate depositing a film on the substrate;
- injecting a pulse of reactant gas into the reaction chamber at a reactant gas pulse time, the reactant gas pulse time being after the pulse of precursor gas has been injected into the reaction chamber and prior to complete purge of the precursor gas;
- and
- reacting the precursor gas with the reactant gas adjacent the substrate to deposit a layer of the film on the substrate.
2 more elements
Dependencies are inferred from the claim text.