Substrate processing apparatus and method of manufacturing semiconductor device

A substrate processing apparatus comprising:

• a substrate support part configured to load a substrate on a substrate loading surface and support the substrate;
• a substrate support moving mechanism configured to move the substrate support part;
• a first gas feeding part configured to feed a first gas from a first gas feeding hole;
• a first exhaust part configured to exhaust the first gas from a first exhaust hole;
• a second gas feeding part configured to feed a second gas from a second gas feeding hole;
• a second exhaust part configured to exhaust the second gas from a second exhaust hole;
• and
• a third gas feeding part interposed between the first exhaust part and the second exhaust part and configured to feed an inert gas,
• wherein at least one of a set of the first gas feeding hole and the first exhaust hole and a set of the second gas feeding hole and the second exhaust hole is arranged above the substrate loading surface with respect to the gravity direction.

A method of manufacturing a semiconductor device using a substrate processing apparatus including:

• a substrate support part provided within a process chamber and configured to support a substrate;
• a substrate support moving mechanism configured to move the substrate support part;
• a gas feeding part configured to feed a gas into the process chamber;
• an exhaust part configured to exhaust the gas within the process chamber;
• and
• a plasma generating part disposed to face the substrate support part, the method comprising:
• exhausting the gas from the exhaust part while feeding the gas from the gas feeding part;
• and
• moving the substrate support part to the gas feeding part and the gas exhaust part.