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AssigneeHitachi Kokusai Electric Inc.
InventorsTakashi Yokogawa, Yasuhiro Inokuchi, Katsuhiko Yamamoto, Yoshiaki Hashiba, Yasuhiro Ogawa
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It is intended to provide a substrate treatment device capable of adjusting both of a growth speed and an etching speed in a selective epitaxial growth, avoiding particle generation from nozzles, and achieving good etching characteristics. A substrate treatment device for selectively growing an epitaxial film on a surface of a substrate by alternately supplying a raw material gas containing silicon and an etching gas to a treatment chamber, the substrate treatment device being provided with a substrate support member for supporting the substrate in the treatment chamber, a heating member provided outside the treatment chamber for heating the substrate and an atmosphere of the treatment chamber, a gas supply system provided inside the treatment chamber, and a discharge port opened on the treatment chamber, wherein the gas supply system comprises first gas supply nozzles for supplying the raw material gas and second gas supply nozzles for supplying the etching gas.
A substrate treatment device at least using a Si-containing gas and a Cl2 gas and alternately supplying the Si-containing gas and the Cl2 gas to a treatment chamber for selectively growing an epitaxial film on a surface of a substrate housed in the treatment chamber, comprising:
A selective epitaxial film growth method for selectively growing an epitaxial film on a surface of a substrate housed in a treatment chamber in a substrate treatment device comprising a plurality of first gas supply nozzles for supplying a Si-containing gas to a plurality of different heights of the treatment chamber and a plurality of second gas supply nozzles for supplying a Cl-containing gas to a plurality of different heights of the treatment chamber, at least comprising:
Dependencies are inferred from the claim text.