Memory devices including dielectric thin film and method of manufacturing the same
AssigneeElectronics and Telecommunications Research Institute
InventorsSung-Yool CHOI, Min Ki RYU, Ansoon KIM, Chil Seong AH, Han Young YU
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Abstract
A memory device including a dielectric thin film having a plurality of dielectric layers and a method of manufacturing the same are provided. The memory device includes: a bottom electrode; at least one dielectric thin film disposed on the bottom electrode and having a plurality of dielectric layers with different charge trap densities from each other; and an top electrode disposed on the dielectric thin film. Therefore, a memory device, which can be readily manufactured by a simple process and can be highly integrated using its simple structure, can be provided.
Claims9
A method of manufacturing a memory device, comprising the steps of:
- forming a bottom electrode;
- forming at least one dielectric thin film having a plurality of dielectric layers with different charge trap densities from each other on the bottom electrode;
- and
- forming an top electrode on the dielectric thin film.
Dependencies are inferred from the claim text.