Method for fabricating semiconductor device
AssigneeHynix Semiconductor Inc.
InventorBaek-Mann KIM
Life of this patent
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Abstract
A method for fabricating a semiconductor device includes forming junction area for a bit line contact (BLC) and a junction area for a storage node contact (SNC) by performing ion implantation in a substrate having a buried gate; forming a first insulation pattern having an opening to expose the junction areas; forming a buffer layer to fill the openings; forming a second insulation pattern over the first insulation pattern after filling the openings, wherein the second insulation pattern has openings to expose the buffer layer in an area of the buffer layer that lies over the junction area for the SNC; and forming an SNC to fill the opening of the second insulation patterns.
Claims18
A method for fabricating a semiconductor device, comprising:
- forming junction area for a bit line contact (BLC) and a junction area for a storage node contact (SNC) by performing ion implantation in a substrate having a buried gate;
- forming a first insulation pattern having an opening to expose the junction area;
- forming a buffer layer to fill the opening;
- forming a second insulation pattern over the first insulation pattern after filling the openings, wherein the second insulation pattern has opening to expose the buffer layer in an area of the buffer layer that lies over the junction area for the SNC;
- and
- forming a SNC plug to fill the opening of the second insulation pattern.
A method for fabricating a semiconductor device, comprising:
- forming a junction area for a bit line contact (BLC) and a junction area for a storage node contact (SNC) by performing ion implantation in a substrate having a buried gate;
- forming a bit line over the junction area for the BLC;
- forming an insulation layer to insulate the bit line over the substrate;
- forming a contact hole by etching the insulation layer, the contact hole exposing the junction area for the SNC;
- forming a buffer layer to fill a portion of the contact hole;
- and
- forming an SNC plug over the buffer layer so as to fill contact hole.
Dependencies are inferred from the claim text.