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US 2011/0212604 A1Published application
Method of fabricating transistor
AssigneeJusung Engineering Co., Ltd.
InventorsCheol Hoon YANG, Yong Han JEON
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Abstract
A method of fabricating a transistor is provided. The transistor includes a SiGe epitaxial layer formed in a recess region of a substrate at both side of a gate electrode and a SiGe capping layer formed on the SiGe epitaxial layer. The transistor further includes a SiGe seed layer formed under the SiGe epitaxial layer and a silicon capping layer formed on the SiGe capping layer.
Claims16
A method of fabricating a transistor, the method comprising:
- forming a gate electrode over a substrate;
- forming a recess region at both sides of the gate electrode;
- forming a first epitaxial layer containing Ge in the recess region;
- and
- forming a second epitaxial layer having Ge concentration lower than that of the first epitaxial layer, wherein the second epitaxial layer is formed at least one of under and on the first epitaxial layer.
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A method of forming a transistor, the method comprising:
- forming a gate electrode over a substrate;
- forming a seed layer that contains Ge in a recess region of the substrate at both sides of the gate electrode;
- forming an epitaxial layer that has a higher Ge concentration than the seed layer on the seed layer in the recess region;
- and
- forming a capping layer that has lower Ge concentration than the epitaxial layer on the epitaxial layer.
2 more elements
Dependencies are inferred from the claim text.