Stress-Enhanced Performance Of A Finfet Using Surface/Channel Orientations And Strained Capping Layers
AssigneeSynopsys, Inc.
InventorsVictor Moroz, Tsu-Jae King Liu
Life of this patent
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Abstract
Different approaches for FinFET performance enhancement based on surface/channel direction and type of strained capping layer are provided. In one relatively simple and inexpensive approach providing a performance boost, a single surface/channel direction orientation and a single strained capping layer can be used for both n-channel FinFETs (nFinFETs) and p-channel FinFETs (pFinFETs). In another approach including more process steps (thereby increasing manufacturing cost) but providing a significantly higher performance boost, different surface/channel direction orientations and different strained capping layers can be used for nFinFETs and pFinFETs.
Claims15
A method of manufacturing FinFETs to enhance carrier mobility, the FinFETs including both nFinFETs and pFinFETs, the method comprising:
- forming a fin of each FinFET with a (100) surface orientation and a <110> channel direction orientation;
- forming a gate over the fin;
- and
- forming a compressive capping layer over the gate and the fin.
A manufacturing process of fabricating FinFETs to enhance carrier mobility, the FinFETs including both nFinFETs and pFinFETs, the manufacturing process comprising:
- forming a fin of each FinFET with a (100) surface orientation and a <110> channel direction orientation;
- forming a gate over the fin;
- and
- forming a compressive capping layer over the gate and the fin.
An integrated circuit (IC) manufacturing technique, the IC including nFinFETs and pFinFETs, the IC manufacturing technique comprising:
- forming a fin of each FinFET with a (100) surface orientation and a <110> channel direction orientation;
- forming a gate over the fin;
- and
- forming a compressive capping layer over the gate and the fin.
Dependencies are inferred from the claim text.