Method of manufacturing semiconductor device, method of manufacturing substrate and substrate processing apparatus

A method of manufacturing a semiconductor device using a substrate processing apparatus comprising:

• a reaction chamber having therein a plurality of substrates stacked at a predetermined distance;
• a first gas supply nozzle installed and extending in a region where the plurality of substrates are stacked;
• a second gas supply nozzle extending in the region, the second gas supply nozzle being installed in a position different from that of the first gas supply nozzle;
• a first branch nozzle installed at the first gas supply nozzle in a direction parallel to a major surface of each of the plurality of substrates, the first branch nozzle being branched toward the second gas supply nozzle and including at least one first gas supply port;
• a second branch nozzle installed at the second gas supply nozzle in the direction parallel to the major surface of each of the plurality of substrates, second branch nozzle being branched toward the first gas supply nozzle, and including at least one second gas supply port, wherein the at least one first gas supply port and the at least one second gas supply port are installed adjacent to each other in a stacking direction of the plurality of substrates, the method comprising steps of:
• loading the plurality of substrates into the reaction chamber;
• and
• supplying one of a mixture of the silicon-containing gas and the chlorine-containing gas and a silicon/chlorine-containing gas into the reaction chamber through the at least one first gas supply port and supplying at least a carbon-containing gas and a reduction gas into the reaction chamber through the at least one second gas supply port to form a silicon carbide film.

A substrate processing apparatus comprising:

• a reaction chamber having therein substrates vertically stacked and arranged to have at a predetermined distance therebetween;
• a first gas supply system configured to supply at least a silicon-containing gas and a chlorine-containing gas into the reaction chamber;
• a second gas supply system configured to supply at least a carbon-containing gas and a reduction gas into the reaction chamber;
• a first gas supply nozzle installed and extending in a region where the substrates are stacked and arranged;
• a second gas supply nozzle extending in the region, the second gas supply nozzle being installed in a position different from that of the first gas supply nozzle;
• at least one gas supply port installed at the first gas supply nozzle;
• at least one second gas supply port installed at the second gas supply nozzle;
• and
• a controller configured to control the first gas supply system and the second gas supply system to supply at least the silicon-containing gas and the chlorine-containing gas into the reaction chamber through the at least one first gas supply port and supply at least the carbon-containing gas and the reduction gas into the reaction chamber through the at least one second gas supply port such that a silicon carbide film is formed on each of the substrates,
• wherein the second gas supply nozzle is installed between the substrates and the first gas supply nozzle.