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US 2011/0212592 A1Published application
Method of forming ultra-shallow junctions in semiconductor devices
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChun-Feng NIEH, Mao-Rong Yeh, Chun Hsiung Tsai, Chii-Ming Wu
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Abstract
A method of forming MOS transistor includes the steps of performing a pocket implantation process on a substrate having a gate stack, performing a co-implanted ion implantation process on the substrate at a temperature less than room temperature, performing a lightly doped source/drain implantation process on the substrate, and forming source and drain regions in the substrate, adjacent the gate stack.
Claims18
A method comprising:
- performing a pocket implantation process on a substrate having a gate stack;
- performing a co-implanted ion implantation process on the substrate at a temperature less than room temperature;
- and
- performing a lightly doped source/drain implantation process on the substrate.
1 more element
A method of forming MOS transistors comprising:
- performing a pocket implantation process on a substrate having a gate stack;
- performing a co-implanted ion implantation process on the substrate at a temperature less than about 0° C.;
- and
- performing a lightly doped source/drain implantation process on the substrate.
1 more element
A method of forming MOS transistors comprising:
- performing a pocket implantation process on a substrate having a gate stack thereon at a temperature not less than about room temperature;
- performing a co-implanted ion implantation process to form amorphous regions in the substrate, wherein the low temperature co-implanted ion implantation process is performed at a temperature ranging between about −100° C. and about 0° C.;
- performing a lightly doped source/drain implantation process on the substrate at a temperature not less than about room temperature;
- and
- forming source and drain regions in the substrate, adjacent the gate stack, wherein a pre-amorphisation implantation process is not performed before or after the steps of pocket implantation or lightly doped source/drain implantation.
2 more elements
Dependencies are inferred from the claim text.