Method for fabricating transistor of semiconductor device
OwnerJae-Geun OH, Young-Ho Lee +2inventors
InventorsJae-Geun OH, Young-Ho Lee, Jin-Ku Lee, Mi-Ri Lee
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Abstract
A method for fabricating a transistor of a semiconductor device includes: forming a gate pattern over a substrate; forming a junction region by performing an on implantation process onto the substrate at opposite sides of the gate pattern; performing a solid phase epitaxial (SPE) process on the junction region at a temperature approximately ranging from 770° C. to 850° C.; and performing a rapid thermal annealing (RTA) process on the junction region.
Claims19
A method for fabricating a transistor of a semiconductor device, comprising:
- forming a gate pattern over a substrate;
- forming a junction region by performing an on implantation process on the substrate at opposite sides of the gate pattern;
- performing a solid phase epitaxial (SPE) process on the junction region at a temperature approximately ranging from 770° C. to 850° C.;
- and
- performing a rapid thermal annealing (RTA) process on the junction region.
A method for fabricating a semiconductor device, comprising:
- forming a junction region by performing an on implantation process on a substrate;
- performing a solid phase epitaxial (SPE) process on the junction region at a temperature approximately ranging from 770° C. to 850° C.;
- and
- performing a rapid thermal annealing (RTA) process on the junction region.
A method for fabricating a semiconductor device, comprising:
- forming a junction region by performing an on implantation process onto a substrate;
- performing a solid phase epitaxial (SPE) process on the substrate to regrow a portion of the substrate damaged from the on implantation;
- and
- performing a rapid thermal annealing (RTA) process on the substrate to activate dopants in the junction region,
- wherein the SPE process is performed at a temperature lower than that of the RTA process.
Dependencies are inferred from the claim text.