Semiconductor device manufacturing method

A semiconductor device manufacturing method for forming a MISFET, comprising:

• forming a metal film containing platinum by depositing a metal on a source/drain diffusion layer primarily made of silicon formed on a semiconductor substrate and on a device isolation insulating film formed on the semiconductor substrate adjacent to the source/drain diffusion layer;
• forming a silicide film by silicidation of an upper part of the source/drain diffusion layer by causing a reaction between silicon in the source/drain diffusion layer and the metal on the source/drain diffusion layer by a first heating processing at a first heating temperature;
• forming a metal oxide film by an oxidation processing to oxidize selectively at least a surface of the metal film on the device isolation insulating film;
• heating the silicide film by a second heating processing at a second heating temperature higher than the first heating temperature;
• and
• selectively removing the metal oxide film and an unreacted part of the metal film on the device isolation insulating film.

A semiconductor device manufacturing method for forming a MISFET, comprising:

• forming a metal film containing platinum by depositing a metal on a source/drain diffusion layer primarily made of silicon formed on a semiconductor substrate and on a device isolation insulating film formed on the semiconductor substrate adjacent to the source/drain diffusion layer and forming a silicide film by silicidation of an upper part of the source/drain diffusion layer by causing a reaction between silicon in the source/drain diffusion layer and the metal on the source/drain diffusion layer by a first heating processing at a first heating temperature;
• forming a metal oxide film by an oxidation processing to oxidize selectively at least a surface of the metal film on the device isolation insulating film;
• heating the silicide film by a second heating processing at a second heating temperature higher than the first heating temperature;
• and
• selectively removing the metal oxide film and an unreacted part of the metal film on the device isolation insulating film.