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US 2011/0212588 A1Published application
Replacing Symmetric Transistors with Asymmetric Transistors
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorKa-Hing Fung
Life of this patent
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Abstract
A semiconductor structure includes a symmetric metal-oxide-semiconductor (MOS) transistor comprising a first and a second asymmetric MOS transistor. The first asymmetric MOS transistor includes a first gate electrode, and a first source and a first drain adjacent the first gate electrode. The second asymmetric MOS transistor includes a second gate electrode, and a second source and a second drain adjacent the second gate electrode. The first gate electrode is connected to the second gate electrode, wherein only one of the first source and the first drain is connected to only one of the respective second source and the second drain.
Claims18
A method comprising:
- forming a first asymmetric MOS transistor comprising:
- forming a first gate electrode over a semiconductor substrate;
- forming a first source region and a first drain region on opposite sides of the first gate electrode;
- and
- forming a first source extension region physically connected to the first source region, wherein no drain extension region is formed to physically connect to the first drain region;
- forming a second asymmetric MOS transistor comprising:
- forming a second gate electrode over the semiconductor substrate;
- forming a second source region and a second drain region on opposite sides of the second gate electrode;
- and
- forming a second source extension region physically connected to the second source region, wherein no drain extension region is formed to physically connect to the second drain region;
- connecting the first gate electrode to the second gate electrode;
- and
- making a connection that connects the first source region to the second source region, or the first drain region to the second drain region.
10 more elements
A method comprising:
- forming a first gate dielectric over a semiconductor substrate;
- forming a second gate dielectric over the semiconductor substrate, wherein the first and the second gate dielectrics are adjacent to each other with a substrate region therebetween;
- forming a first gate electrode over the first gate dielectric;
- forming a second gate electrode over the second gate dielectric;
- performing a first tilt implantation to form a first source extension region of a first asymmetric MOS transistor, wherein the first gate electrode substantially shadows the substrate region from being implanted;
- and
- performing a second tilt implantation to form a second source extension region of a second asymmetric MOS transistor, wherein the second gate electrode substantially shadows the substrate region from being implanted;
- forming a first source region adjoining the first source extension region;
- forming a second source region adjoining the second source extension region;
- implanting the substrate region to form a common drain;
- and
- electrically connecting the first and the second gate electrodes.
9 more elements
A method comprising:
- forming a first asymmetric MOS transistor comprising:
- forming a first gate electrode over a semiconductor substrate, and a first source and a first drain on opposite sides of the first gate electrode;
- and
- forming a first source extension region physically connected to the first source region and horizontally between the first source and the first gate electrode, wherein no drain extension is formed to be horizontally between the first drain and the first gate electrode;
- forming a second asymmetric MOS transistor comprising:
- forming a second gate electrode, and a second source and a second drain on opposite sides of the second gate electrode, wherein the first source is physically separated from the second source, and the first drain is physically separated from the second drain;
- and
- forming a second source extension region physically connected to the second source region and horizontally between the second source region and the second gate electrode, wherein no drain extension is formed to be horizontally between the second drain and the second gate electrode;
- connecting the first gate electrode to the second gate electrode through a metal line;
- and
- forming a connection to connect the first source to the second source, or the first drain to the second drain.
8 more elements
Dependencies are inferred from the claim text.