Semiconductor Device with Reliable High-Voltage Gate Oxide and Method of Manufacture Thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChyi-Chyuan Huang, Shyh-An Lin, Chen-Fu Hsu
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Abstract
A semiconductor device including a capacitor and a proximate high-voltage gate having a boron-barrier layer that ideally serves as part of both the capacitor dielectric and the (high voltage) HV gate oxide. The boron-barrier layer is preferably formed over a poly oxide layer that is in turn deposited on a substrate infused to create a neighboring wells, and N-well over which the capacitor will be formed, and P-well to be overlaid by the HV gate. The boron-barrier helps to reduce or eliminate the harmful effects of boron diffusion from the P-well during TEOS deposition of the gate oxide material.
Claims20
A method comprising:
- forming a first capacitor plate over a first region of a substrate;
- forming a boron-barrier layer over the first capacitor plate and over a second region of the substrate;
- forming a high-voltage gate electrode over the boron-barrier layer in the second region;
- and
- forming a second capacitor plate over the boron-barrier layer.
A method comprising:
- forming a first gate stack over a first region of a substrate, the substrate also comprising a second region;
- forming a boron-barrier layer over the first region and the second region, the forming the boron-barrier layer being performed after the forming the first gate stack;
- and
- forming a high-voltage transistor in the second region, wherein the forming the high-voltage transistor further comprises:
- forming a source region and a drain region;
- and
- forming a single high-voltage gate electrode between the source region and the drain region, the forming the single high-voltage gate electrode being performed after the forming the boron-barrier layer.
A method comprising:
- forming a boron-barrier layer over a bottom capacitor plate, the bottom capacitor plate being located in a first region of a substrate, the boron-barrier layer extending into a second region of the substrate;
- forming a first layer of conductive material over the boron-barrier layer in both the first region and the second region;
- and
- patterning the first layer of conductive material to form a top capacitor plate over the bottom capacitor plate and to form a high-voltage gate electrode in the second region.
Dependencies are inferred from the claim text.