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US 2011/0212579 A1Published application
Fully Depleted SOI Multiple Threshold Voltage Application
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHao-Yu Chen, Chang-Yun Chang, Di-Hong Lee, Fu-Liang Yang
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Abstract
An integrated circuit comprises a substrate and a buried dielectric formed in the substrate. The buried dielectric has a first thickness in a first region, a second buried dielectric thickness in a second region, and a step between the first and second regions. A semiconductor layer overlies the buried dielectric.
Claims20
A method comprising:
- forming a first mask over a first region of a semiconductor substrate;
- implanting a first material into a second region of the semiconductor substrate;
- removing the first mask;
- implanting a second material into the first and into the second region of the semiconductor substrate, the implanting steps forming a buried dielectric material in the semiconductor substrate, the buried dielectric material having a first thickness in the first region and a second thickness in the second region;
- and
- annealing the semiconductor substrate.
3 more elements
A method comprising:
- implanting a first material in a first region of a semiconductor substrate;
- implanting a second material in the first region and a second region of the semiconductor substrate;
- and
- annealing the semiconductor substrate, wherein a combination of the first material and the second material in the first region has a different dielectric property than the second material in the second region.
1 more element
A method comprising:
- providing a substrate;
- and
- forming a dielectric region below a surface of the substrate, the dielectric region having a first region and a second region, the first region and the second region having a different thickness, the forming being performed at least in part by implanting.
Dependencies are inferred from the claim text.