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US 2011/0212576 A1Published application
Semiconductor heterostructure nanowire devices
AssigneeUniversity of Iowa Research Foundation
InventorsCraig Pryor, Mats-Erik Pistol
Life of this patent
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Abstract
Nanowire devices comprising core-shell or segmented nanowires are provided. In these nanowire devices, strain can be used as a tool to form metallic portions in nanowires made from compound semiconductor materials, and/or to create nanowires in which embedded quantum dots experience negative hydrostatic pressure or high positive hydrostatic pressure, whereby a phase transitions may occur, and/or to create exciton crystals.
Claims5
1-16. (canceled)
A method of forming an integral electrical contact to a nanoelectronics device, the method comprising:
- providing the nanoelectronics device with a heterostructure having a first portion comprising a first compound semiconductor material, and a second portion adjacent to the first portion and comprising a second compound semiconductor material, wherein at least one of the first portion or the second portion is substantially metallic as the result of a strain-induced semiconductor-to-metallic phase transition;
- and
- electrically coupling the contact with an external circuit.
Dependencies are inferred from the claim text.