Method for manufacturing semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei YAMAZAKI, Hiroki OHARA
Life of this patent
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Abstract
It is an object to provide a highly reliable semiconductor device, a semiconductor device with low power consumption, a semiconductor device with high productivity, and a method for manufacturing such a semiconductor device. Impurities left remaining in an oxide semiconductor layer are removed without generating oxygen deficiency, and the oxide semiconductor layer is purified to have an extremely high purity. Specifically, after oxygen is added to the oxide semiconductor layer, heat treatment is performed on the oxide semiconductor layer to remove the impurities. In order to add oxygen, it is preferable to use a method in which oxygen having high energy is added by an ion implantation method, an ion doping method, or the like.
Claims25
A method for manufacturing a semiconductor device, comprising the steps of:
- forming an oxide semiconductor layer;
- performing addition of oxygen on the oxide semiconductor layer;
- and
- performing heat treatment at higher than or equal to 250° C. and lower than or equal to 700° C. on the oxide semiconductor layer on which the addition of oxygen is performed.
A method for manufacturing a semiconductor device, comprising the steps of:
- forming a gate electrode;
- forming a gate insulating layer over the gate electrode;
- forming an oxide semiconductor layer overlapping with the gate electrode so as to be in contact with the gate insulating layer;
- performing addition of oxygen on the oxide semiconductor layer;
- performing heat treatment on the oxide semiconductor layer on which the addition of oxygen is performed;
- forming a source electrode and a drain electrode whose end portions overlap with the gate electrode so as to be in contact with the oxide semiconductor layer on which the heat treatment is performed;
- and
- forming an insulating layer so as to be in contact with and overlap with a channel formation region of the oxide semiconductor layer.
A method for manufacturing a semiconductor device, comprising the steps of:
- forming a source electrode and a drain electrode;
- forming an oxide semiconductor layer overlapping with an end portion of the source electrode and an end portion of the drain electrode;
- performing addition of oxygen on the oxide semiconductor layer;
- performing heat treatment on the oxide semiconductor layer on which the addition of oxygen is performed;
- forming a gate insulating layer overlapping with the end portion of the source electrode and the end portion of the drain electrode to be in contact with the oxide semiconductor layer on which the heat treatment is performed;
- and
- forming a gate electrode overlapping with the end portion of the source electrode and the end portion of the drain electrode so as to be in contact with the gate insulating layer.
Dependencies are inferred from the claim text.