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US 2011/0212568 A1Published application
Phase change memory devices including phase change layer formed by selective growth methods and methods of manufacturing the same
AssigneeSamsung Electronics Co., Ltd.
InventorWoong-chul Shin
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Abstract
A phase change memory device including a phase change layer includes a storage node and a switching device. The switching device is connected to the storage node. The storage node includes a phase change layer selectively grown on a lower electrode. In a method of manufacturing a phase change memory device, an insulating interlayer is formed on a semiconductor substrate to cover a switching device. A lower electrode connected to the switching device is formed, and a phase change layer is selectively grown on the lower electrode.
Claims13
A method of manufacturing a phase change memory device, the method comprising:
- forming an insulating interlayer on a semiconductor substrate including a switching device, the insulating interlayer being formed to cover the switching device;
- forming a lower electrode connected to the switching device;
- and
- selectively growing a phase change layer on the lower electrode.
1 more element
Dependencies are inferred from the claim text.