Method for fabricating nitride semiconductor light emitting device and method for fabricating epitaxial wafer

Abstract

Provided is a method of fabricating a nitride semiconductor light emitting device, and this method can reduce degradation of a well layer during formation of a p-type gallium nitride based semiconductor region and a barrier layer. After growth of a gallium nitride based semiconductor region 13, a barrier layer 21a is grown on a substrate 11. The barrier layer 21a is formed at a growth temperature TB during a period from a time t1 to t2. The growth temperature TB (=T2) is in the range of not less than 760 Celsius degrees and not more than 800 Celsius degrees. At the time t2, the growth of the barrier layer 21a is completed. After the growth of the barrier layer 21a, a well layer 23a is grown on the substrate 11 without interruption of growth. The well layer 23a is formed at a growth temperature TW (=T2) during a period from the time t2 to t3. The growth temperature TW is the same as the growth temperature TB and can be in the range of not less than 760 Celsius degrees and not more than 800 Celsius degrees. An indium composition of the well layer 23a is not less than 0.15. Next, the growth of the well layer and barrier layer is repeatedly carried out without interruption of growth.

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