Uv absorption based monitor and control of chloride gas stream
AssigneeS.O.I.Tec Silicon on Insulator Technologies
InventorsRonald Thomas Bertram Jr., Chantal Arena, Christiaan J. Werkhoven, Michael Albert Tischler, Vasil Vorsa, Andrew D. Johnson
Life of this patent
Estimating the term…
Abstract
A semiconductor growth system includes a chamber and a source of electromagnetic radiation. A detector is arranged to detect absorption of radiation from the source by a chloride- based chemical of the reaction chamber. A control system controls the operation of the chamber in response to the absorption of radiation by the chloride-based chemical. The control system controls the operation of the chamber by adjusting a parameter of the reaction chamber.
Claims19
A semiconductor growth system, comprising:
- a chamber;
- a source of electromagnetic radiation;
- a detector arranged to detect absorption of radiation from the source by a chloride-based chemical of the chamber;
- and
- a control system which controls the operation of the chamber in response to the absorption of radiation by the chloride-based chemical.
A method of forming a semiconductor, comprising:
- radiating electromagnetic radiation through an inner volume of a chamber;
- detecting absorption of the radiation by a chloride-based chemical of the chamber;
- and
- controlling the operation of the chamber in response to the absorption of the radiation.
Dependencies are inferred from the claim text.