Ferroelectric passive memory cell, device and method of manufacture thereof

A first passive memory device comprising at least one passive ferroelectric memory element and at least one substrate at least one of said substrates having at least one conductive surface or surface layer on the at least one side provided with said passive ferroelectric memory element, said passive ferroelectric memory element comprising a first electrode system and a second electrode system, wherein said first electrode system is at least partly insulated from said second electrode system by an element system comprising at least one ferroelectric element, wherein said first electrode system is a conductive surface, or a conductive layer;

• wherein said second electrode system is an electrode pattern or a plurality of isolated conductive areas in contact with, for read-out and/or data-input purposes only, a plurality of conducting pins isolated from one another;
• and wherein, with the exception of said first electrode system being the conductive surface of a metallic substrate, said systems are printable using conventional printing processes.

A first precursor for said first passive memory device comprising a substrate and on at least one side of said substrate:

• a conductive surface of said substrate or a conductive layer on said substrate, an element system comprising an organic ferroelectric element on said conductive surface or said conductive layer.

A second precursor for said first passive memory device comprising a substrate and on at least one side of said substrate:

• a conductive surface of said substrate or a conductive layer on said substrate, an element system comprising an organic ferroelectric element on said conductive surface or said conductive layer and a plurality of isolated conductive areas provided for contact, for read-out and/or data-input purposes only, with a plurality of conducting pins isolated from one another.

A second passive ferroelectric memory element comprising a first electrode system and a second electrode system, wherein said first electrode system is at least partly insulated from said second electrode system by an element system comprising at least one ferroelectric element, wherein said first electrode system is an electrode pattern;

• and wherein said second electrode system is an electrode pattern and wherein said first electrode system, said second electrode system and said element system are all printable with conventional printing techniques.

A second passive memory device, said passive memory device comprising at least one substrate and a passive memory element on at least one side of said at least one substrate, said passive memory element comprising a first patterned electrode system, a second patterned electrode system, an element system comprising at least one ferroelectric element between said first patterned electrode system and said second patterned electrode system;

• and wherein said second electrode system is an electrode pattern and wherein said first electrode system, said second electrode system and said element system are all printable with conventional printing techniques.

A process for providing a second passive memory device, said passive memory device comprising a substrate and a passive memory element on at least one side of said at least one substrate, said passive memory element comprising a first patterned electrode system, a second patterned electrode system, an element system comprising at least one ferroelectric element between said first patterned electrode system and said second patterned electrode system, comprising the steps of:

• realizing a first electrode pattern on a non-conductive surface of a substrate, providing said element system on said first electrode pattern and providing a second electrode pattern on said element system, wherein the steps of providing a first patterned electrode system, providing an organic ferroelectric layer and providing a second electrode system are all realized with a conventional printing process.