Advanced phase shift lithography and attenuated phase shift mask for narrow track width d write pole definition

A mask for photolithographically patterning a feature on a wafer, the mask comprising:

• a transparent medium;
• a phase shifted region formed in the transparent medium;
• and
• a non-phase shifted region immediately adjacent to the phase shifted region such that a transition between the phase shifted region and non-phase shifted region allows patterning of a feature on the wafer without the need for an opaque feature on the mask.

A method for patterning a feature on a wafer, comprising:

• providing a wafer;
• depositing a layer of photoresist on the wafer;
• photolithographically patterning the photoresist using a mask, the mask comprising:
• an opaque portion having first and second sides;
• first and second transparent phase shifting regions formed at the first and second sides of the opaque portion;
• a transparent non-phase shifted region extending beyond the first and second phase shifting portions.

A method for patterning a feature on a wafer, comprising:

• providing a wafer;
• depositing a layer of photoresist on the wafer;
• photolithographically patterning the photoresist using a mask, the mask comprising:
• a transparent medium;
• a phase shifted region formed in the transparent medium;
• and
• a non-phase shifted region immediately adjacent to the phase shifted region such that a transition between the phase shifted region and non-phase shifted region allows patterning of a feature on the wafer without the need for an opaque feature on the mask.