Method for preparing oxide thin film gas sensors with high sensitivity

Abstract

The present invention relates to a method for preparing oxide thin films with high sensitivity and reliability, which can be advantageously used in the fabrication of articles such as gas sensors. The present invention establishes a high reliability process for preparing large area microsphere templates which may be applicable to silicone semiconductor processes by simple plasma surface treatment and spin coating. The present invention achieves remarkably enhanced sensitivities of thin films of gas sensors by controlling the nanostructure shapes of hollow hemisphere oxide thin films by using simple plasma treatment. In particular, the gas sensor based on the nanostructured TiO2 hollow hemisphere according to the present invention exhibits higher sensitivity, faster response and recovery speed to CO gas over conventional TiO2 gas sensors.

Dependencies are inferred from the claim text.