Methods Of Forming Electrically Conductive Structures
AssigneeMicron Technology, Inc.
InventorNishant Sinha
Life of this patent
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Abstract
Some embodiments include methods of forming conductive material within high aspect ratio openings and low aspect ratio openings. Initially, the high aspect ratio openings may be filled with a first conductive material while the low aspect ratio openings are only partially filled with the first conductive material. Additional material may then be selectively plated over the first conductive material within the low aspect ratio openings relative to the first conductive material within the high aspect ratio openings. In some embodiments, the additional material may be activation material that only partially fills the low aspect ratio opening, and another conductive material may be subsequently plated onto the activation material to fill the low aspect ratio openings.
Claims18
A method of forming electrically conductive structures, comprising:
- forming two sets of openings over a semiconductor substrate, a first of the two sets having a first width and a second of the two sets having a second width, the first width being less than the second width;
- overfilling the first set of the openings with a first conductive material while only partially filling the second set of the openings with the first conductive material;
- forming a planarized surface over the first set of openings;
- after forming the planarized surface, selectively plating activation material over the first conductive material within the second set of the openings while leaving the first conductive material exposed within the first set of the openings;
- and
- selectively plating second conductive material on the activation material relative to the exposed first conductive material.
A method of forming electrically conductive structures, comprising:
- forming two sets of openings over a semiconductor substrate, a first of the two sets having a greater aspect ratio than a second of the two sets;
- overfilling the first set of the openings with a first conductive material while only partially filling the second set of the openings with the first conductive material;
- planarizing a surface of the first conductive material within the first set of openings;
- after the planarizing, exposing the substrate to plating conditions that selectively form activation material over the first conductive material within the second set of the openings while leaving the first conductive material exposed within the first set of the openings;
- selectively forming second conductive material on the activation material relative to the exposed first conductive material to overfill the second set of openings;
- and
- planarizing a surface of the second conductive material within the second set of openings.
Dependencies are inferred from the claim text.