Semiconductor laser element

A semiconductor laser element comprising:

• an active layer comprising a quantum well layer and barrier layers;
• an n-type carrier blocking layer arranged so as to be adjacent to the active layer, and having a bandgap width equal to or greater than bandgap widths of the barrier layers;
• an n-type waveguide layer arranged on a side opposite to a side of the n-type carrier blocking layer on which the active layer is arranged, so as to be adjacent to the n-type carrier blocking layer;
• an n-type clad layer arranged on a side opposite to a side of the n-type waveguide layer on which the active layer is arranged, so as to be adjacent to the n-type waveguide layer, the n-type clad layer having a bandgap width greater than a bandgap width of the n-type waveguide layer;
• and
• a p-type clad layer arranged on a side opposite to a side of the active layer on which the n-type carrier blocking layer is arranged, so as to be adjacent to the active layer, the p-type clad layer having a bandgap width greater than bandgap widths of the barrier layers and the n-type waveguide layer.