Global bit select circuit interface with false write through blocking

A global to local bit line interface circuit for domino static random access memory (SRAM) devices, the circuit comprising:

• a pair of complementary global write bit lines in selective communication with an array of SRAM cells through corresponding local write bit lines, the complementary global write bit lines configured to write a selected SRAM cell with data presented on a pair of complementary write data input lines;
• a pair of complementary global read bit lines in selective communication with the array of SRAM cells through corresponding local read bit lines, the complementary global read bit lines configured to read data stored in a selected SRAM cell and present the read data on a pair of complementary read data output lines;
• and
• blocking logic configured to prevent, during a write operation, propagation of stored data from the SRAM cells out on the complementary read data output lines, via the complementary global read bit lines, prior to completion of the write operation by ensuring that one of the complementary read data output lines is maintained at a precharged level, regardless of the value of any data present on the complementary global read bit lines during the write operation.