Magnetoresistive element and magnetoresistive random access memory including the same

A magnetoresistive element comprising:

• a magnetization reference layer having magnetization substantially perpendicular to a film plane, a direction of the magnetization being invariable;
• a magnetization free layer having magnetization substantially perpendicular to the film plane, a direction of the magnetization being variable;
• and
• a barrier layer provided between the magnetization reference layer and the magnetization free layer, and having a NaCl structure,
• at least one of the magnetization reference layer and the magnetization free layer including:
• a first film formed in contact with the barrier layer, and comprising a first magnetic material having a BCC structure, the first magnetic material including at least one element selected from the group consisting of Fe, Co, and Ni, at 50 atomic % or higher;
• a second film formed in contact with the first film on the opposite side from the barrier layer, and including at least one element selected from the group consisting of Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Vb, and Lu;
• and
• a third film formed on the opposite side of the second film from the first film, the third film comprising a second magnetic material containing at least one element selected from the group consisting of Fe, Co, and Ni,
• the magnetization direction of the magnetization free layer being variable by flowing a current between the magnetization reference layer and the magnetization free layer via the barrier layer.

A magnetoresistive element comprising:

• a magnetization reference layer having magnetization substantially perpendicular to a film plane, a direction of the magnetization being invariable;
• a magnetization free layer having magnetization substantially perpendicular to the film plane, a direction of the magnetization being variable;
• and
• a barrier layer provided between the magnetization reference layer and the magnetization free layer, and having a NaCl structure,
• at least one of the magnetization reference layer and the magnetization free layer including:
• a first film formed in contact with the barrier layer, and comprising a first magnetic material having a BCC structure, the first magnetic material including at least one element selected from the group consisting of Fe, Co, and Ni, at 50 atomic % or higher;
• a second film formed in contact with the first film on the opposite side from the barrier layer, and including at least one element selected from the group consisting of Si, Ge, and Ga;
• and
• a third film formed on the opposite side of the second film from the first film, the third film comprising a second magnetic material containing at least one element selected from the group consisting of Fe, Co, and Ni,
• the magnetization direction of the magnetization free layer being variable by flowing a current between the magnetization reference layer and the magnetization free layer via the barrier layer.