Current sensor for a semiconductor device and system

A semiconductor device, comprising:

• a semiconductor die comprising:
• a single semiconductor substrate;
• a high side transistor over the single semiconductor substrate, wherein the high side transistor comprises a drain electrically coupled to a device voltage in (VIN) pinout and a source;
• a low side transistor over the single semiconductor substrate, wherein the low side transistor comprises a source electrically coupled to a device ground (PGND) pinout and a drain;
• and
• a current sensor comprising:
• a top electrode electrically coupled to a first surface of the single semiconductor substrate;
• and
• a bottom electrode electrically coupled to a second surface of the single semiconductor substrate which is opposite the first surface of the single semiconductor substrate, wherein:
• the source of the high side transistor and the drain of the low side transistor are electrically coupled to the bottom electrode of the current sensor;
• and
• the current sensor is adapted to provide a measurement of a current flowing through the single semiconductor substrate.

An electronic system, comprising:

• a direct current (DC) to DC converter, comprising:
• a first semiconductor substrate;
• a high side transistor over the first semiconductor substrate, wherein the high side transistor comprises a drain electrically coupled to a device voltage in (VIN) pinout and a source;
• a low side transistor over the first semiconductor substrate, wherein the low side transistor comprises a source electrically coupled to a device ground (PGND) pinout and a drain;
• a second semiconductor substrate different from the first semiconductor substrate;
• a controller over the second semiconductor substrate and adapted to control the DC to DC converter;
• and
• a current sensor comprising:
• a top electrode electrically coupled to a first surface of the single semiconductor substrate;
• and
• a bottom electrode electrically coupled to a second surface of the single semiconductor substrate which is opposite the first surface of the single semiconductor substrate, wherein:
• the source of the high side transistor and the drain of the low side transistor are electrically coupled to the bottom electrode of the current sensor;
• and
• the current sensor is adapted to provide a measurement of a current flowing through the single semiconductor substrate;
• a power supply electrically coupled to the DC to DC converter through a first power bus and adapted to supply power to the DC to DC converter through the first power bus;
• a processor electrically coupled to the DC to DC converter through a second power bus, wherein the DC to DC converter is adapted to supply power to the processor through the second power bus;
• and
• a data bus adapted to transfer data between at least one memory device and the processor.

A method for forming a semiconductor device, comprising:

• forming a doped epitaxial layer over a front surface of a semiconductor substrate;
• etching an opening through the doped epitaxial layer to expose the semiconductor substrate;
• forming a portion of a top electrode for a current sensor within the opening which electrically contacts the semiconductor substrate;
• and
• forming a conductive layer over a back surface of the semiconductor substrate, wherein the back surface is opposite the front surface, and the conductive layer forms a bottom electrode for the current sensor;
• wherein the current sensor is adapted to provide a measurement of current flowing through the semiconductor substrate.

A method of manufacture of a semiconductor device, comprising:

• forming a semiconductor substrate;
• forming a current sensor in the semiconductor substrate;
• electrically coupling a top electrode of the current sensor to a first surface of the semiconductor substrate;
• and
• electrically coupling a bottom electrode of the current sensor to a second surface of the semiconductor substrate which is opposite the first surface of the semiconductor substrate.