Power amplifier device
AssigneeRenesas Electronics Corporation
InventorsTsuyoshi KAWAKAMI, Kazuyasu Nishikawa
Life of this patent
Estimating the term…
Loading patent…
AssigneeRenesas Electronics Corporation
InventorsTsuyoshi KAWAKAMI, Kazuyasu Nishikawa
Estimating the term…
This invention provides a power amplifier device that satisfies both of delivering a high output and reducing the chip area occupied by the power amplifier device. The power amplifier device formed over a substrate comprises primary inductors arranged in a generally circular geometry, a ground pattern, transistor pairs, and a secondary inductor. The ground pattern is provided to extend from a portion of a region inside the circular primary inductor into regions outside the primary inductor, when viewed from the direction perpendicular to the substrate, and grounded at a plurality of points in the regions outside the primary inductor. To both ends of each primary inductor, first main electrodes of first and second transistors forming a transistor pair in linkage with the primary inductor are coupled respectively. Second main electrodes of the first and second transistors are coupled to the ground pattern in the region inside the primary inductor and have electrical conduction to the respective plurality of points grounded.
A power amplifier device formed over a substrate, comprising:
A power amplifier device formed over a substrate, comprising:
Dependencies are inferred from the claim text.