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US 2011/0210783 A1Published application
Transistor including reentrant profile
AssigneeEastman Kodak Company
InventorsLee W. Tutt, Shelby F. Nelson
Life of this patent
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Abstract
A transistor includes a substrate, an electrically conductive material layer, and an electrically insulating material layer. At least a portion of one or more of the substrate, the electrically conductive material layer, and the electrically insulating material layer define a reentrant profile.
Claims8
A transistor comprising:
- a substrate;
- an electrically conductive material layer;
- and
- an electrically insulating material layer, at least a portion of one or more of the substrate, the electrically conductive material layer, and the electrically insulating material layer defining a reentrant profile.
1 more element
A method of actuating a semiconductor device comprising:
- providing a transistor including:
- a substrate;
- a first electrically conductive material layer;
- an electrically insulating material layer, the electrically insulating material layer including a reentrant profile relative to the electrically conductive material layer;
- a second electrically conductive material layer located over the electrically insulating material layer;
- and
- a third electrically conductive material layer located over the substrate;
- applying a voltage between the second electrically conductive material layer and the third electrically conductive material layer;
- and
- applying a voltage to the first electrically conductive material layer to electrically connect the second electrically conductive material layer and the third electrically conductive material layer.
7 more elements
Dependencies are inferred from the claim text.