Vertical Transistor and Method of Enabling a Vertical Transistor to Generate an Alternating Current Output

A vertical transistor capable of generating an alternating current (AC) output based on an input voltage that includes a direct current (DC) component and a ripple component, said vertical transistor comprising:

• a source layer adapted to be applied with the input voltage;
• a drain layer opposite to said source layer in a first direction;
• a resilient active unit formed between said source layer and said drain layer, and including an active layer, a first barrier layer formed between said active layer and said source, and a second barrier layer formed between said active layer and said drain layer, each of said first and second barrier layers being made of silicon nitride and having a thickness ranging from 4 nm to 40 nm;
• a gate isolating layer flanking an assembly of said source layer, said active unit and said drain layer;
• and
• a gate layer formed on said gate isolating layer, opposite to said assembly of said source layer, said drain layer and said active unit in a second direction transverse to the first direction, and adapted to be applied with an external control voltage;
• wherein, when the input voltage is applied to said source layer, said active unit periodically vibrates as a result of the ripple component of the input voltage such that an AC current is generated based on the control voltage applied to said gate layer to flow to said drain layer, the AC current flowing to the said drain layer serving as the AC output.