Reconfigurable semiconductor device

A method of using a semiconductor device, the method comprising:

• adjusting a first critical value of a first channel having a first polarity by applying a first electric field to the first channel, wherein the first channel has a first end and a second end;
• adjusting a second critical value of a second channel having a second polarity by applying a second electric field to the second channel, wherein the second channel has a first end and a second end;
• and
• applying a voltage between both the first end and the second end of the first channel and also the first end and the second end of the second channel.

A method of using a semiconductor device, the method comprising:

• applying a bias to a control gate apart from at least one charge storage layer, wherein the charge storage layer is apart from a first channel having a first polarity and a second channel having a second polarity, and wherein the charge storage layer is insulated from the control gate, the first channel, and the second channel;
• cutting off the bias to produce a charge in the charge storage layer;
• and
• applying a voltage between a first terminal electrode and a second terminal electrode, wherein the first terminal electrode is adapted to couple together a first end of the first electrode and a first end of the second electrode, and wherein the second terminal electrode is adapted to couple together a second end of the first electrode and a second end of the second electrode.